Semicondcutor package

ABSTRACT

A semiconductor package, a manufacturing method for the semiconductor package and a printing module used thereof are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias, a polymeric cover film covering the molding compound and the die and polymeric dam structures disposed aside the connectors. The polymeric cover film and the polymeric dam structures are formed by printing.

BACKGROUND

Package-on-package wafer level packaging technology has the potentialsto satisfy the urges of size reduction, high performance interconnectsand better thermal management for future packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1L′ are schematic cross sectional views of variousstages in a manufacturing method of a semiconductor package according tosome exemplary embodiments of the present disclosure.

FIG. 1M is a schematic partially enlarged top view of the semiconductorpackage according to some exemplary embodiments.

FIG. 2A to FIG. 2D are schematic cross sectional views illustrating asemiconductor package at various stages of the manufacturing methodaccording to some exemplary embodiments of the present disclosure.

FIG. 3A to FIG. 3D are schematic cross sectional views of various stagesin a manufacturing method of a semiconductor package according to someexemplary embodiments of the present disclosure.

FIG. 4A is a layout diagram of a processing system according to someexemplary embodiments of the present disclosure.

FIGS. 4B and 4C are schematic cross sectional views illustratingprocessing chambers of the processing system for the manufacturing of asemiconductor package according to some exemplary embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In addition, terms, such as “first,” “second,” “third,” “fourth,” andthe like, may be used herein for ease of description to describe similaror different element(s) or feature(s) as illustrated in the figures, andmay be used interchangeably depending on the order of the presence orthe contexts of the description.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1A to FIG. 1L′ are schematic cross sectional views of variousstages in a manufacturing method of a semiconductor package according tosome exemplary embodiments. FIG. 1M is a schematic partially enlargedtop view of the semiconductor package according to some exemplaryembodiments. In exemplary embodiments, the semiconductor manufacturingmethod is part of a wafer level packaging process. In some embodiments,two dies are shown to represent plural dies of the wafer, and one ormore packages are shown to represent plural semiconductor packagesobtained following the semiconductor manufacturing method.

Referring to FIG. 1A, in some embodiments, a carrier 102 is provided,the carrier 102 may be a glass carrier or any suitable carrier for themanufacturing method of the semiconductor package. In some embodiments,the carrier 102 is provided with a debond layer 104 coated thereon, andthe debond layer 104 may be a light-to-heat conversion (“LTHC”) layer orusing any material suitable for debonding the carrier 102 from the abovelayers or wafer disposed thereon. Referring to FIG. 1A, in someembodiments, an adhesive layer 106 is formed on the debond layer 104over the carrier 102. The adhesive layer 106 includes, for example, aultra-violet curable adhesive, a heat curable adhesive, an optical clearadhesive or the like. In some embodiments, as shown in FIG. 1A, a seedlayer 108 is formed on the adhesive layer 106. In certain embodiments,the seed layer 108 is a multilayered structure and the seed layer 108 isformed by sputtering or depositing a titanium layer and a copper seedlayer sequentially on the adhesive layer 106 over the carrier 102. Insome embodiments, the adhesive layer 106 is optional and the seed layer108 may be formed directly on the debond layer 104.

Referring to FIG. 1B, in some embodiments, through interlayer vias(“TIVs”) 120 are formed on the seed layer 108 over the carrier 102. Insome embodiments, the TIVs 120 are through integrated fan-out (“InFO”)vias. In some embodiments, the TIVs 120 are formed by forming a maskpattern 110 with openings on the seed layer 108 and forming a metalmaterial (not shown) filling up the openings of the mask pattern 110 toform the TIVs 120 on the seed layer 108 by electroplating or deposition.In certain embodiments, the material of the TIVs 120 includes copper orcopper alloys formed by electroplating.

Referring to FIG. 1C, after removing the mask pattern 110, the seedlayer 108 is patterned using the TIVs 120 as the masks to form the seedpattern 108 a exposing portions of the adhesive layer 106. In someembodiments, the patterning of the seed layer 108 includes performing atleast one anisotropic or isotropic etching process. However, it isappreciated that the scope of this disclosure is not limited to thematerials and descriptions disclosed above.

Referring to FIG. 1D, first dies 130 are provided and placed on theexposed adhesive layer 106 on the carrier 102. In exemplary embodiments,the first dies 130 are the same types of dies and the dies may be memorychips, application-specific integrated circuit chips, analog chips,sensor chips, wireless and radio frequency chips, microprocessor chipsor voltage regulator chips. In other embodiments, the first dies 130 mayinclude different types of dies. In certain embodiment, a die attachfilm 131 may be provided between the first dies 130 and the adhesivelayer 106 for better adhering. In certain embodiment, as shown in FIG.1D, active surfaces 130 a of the first dies 130 includes contacts 132and backsides of the first dies 130 are attached to the carrier 102. Insome embodiments, the first dies 130 are placed over the carrier 102 andarranged aside the TIVs 120 (within the area surrounding by the TIVs120). In some embodiments, as shown in FIG. 1D, the dotted linerepresents a cutting line of package units 10 (see FIG. 1L′), and someof the TIVs 120 around the first dies 130 are arranged close to but noton the cutting line.

Referring to FIG. 1E, in some embodiments, the first dies 130 and theTIVs 120 located over the carrier 102, and the first dies 130 are moldedand encapsulated in a molding compound 160. In one embodiment, themolding compound 160 fills the space between the first dies 130 and theTIVs 120, and covers the adhesive layer 106. In one embodiment, themolding compound 160 may be formed by the overmolding process and theformed molding compound 160 covers the entirety of the first dies 130and the TIVs 120. In some embodiments, the material of the moldingcompound 160 includes epoxy resins, phenolic resins orsilicon-containing resins.

Referring to FIG. 1E, in some embodiments, the over-molded moldingcompound 160 and the TIVs 120 are planarized or polished until the TIVs120 and the contacts 132 of the first dies 130 are exposed. In someembodiments, the molding compound 160 and the TIVs 120 are planarizedthrough a grinding process or a chemical mechanical polishing process.

Referring to FIG. 1F, in some embodiments, a redistribution layer 170 isformed on the planarized molding compound 160, over the first dies 130and on the TIVs 120. In some embodiment, the redistribution layer 170 isphysically and electrically connected to the TIVs 120 and the contacts132 of the first dies 130. The formation of the redistribution layer 170includes sequentially forming one or more polymer dielectric materiallayers and one or more metallization layers in alternation. In someembodiments, the material of the metallization layer(s) includesaluminum, titanium, copper, nickel, tungsten, and/or alloys thereof. Insome embodiments, the material of the polymer dielectric materiallayer(s) includes polyimide, benzocyclobutene, polybenzooxazole, or anyother suitable polymer-based dielectric material. In some embodiments,the redistribution layer 170 is a front-side redistribution layerelectrically connected to the first dies 130 and is electricallyconnected to the TIVs 120.

Referring to FIG. 1G, in some embodiments, conductive elements 180 aredisposed on the redistribution layer 170 and are electrically connectedto the redistribution layer 170. In some embodiments, the conductiveelements 180 are, for example, solder balls or ball grid array (“BGA”)balls placed on the redistribution layer 170. In some embodiments, theconductive 180 may be disposed on under bump metal (UBM) pads (notshown). In some embodiments, some of the conductive elements 180 areelectrically connected to the first dies 130 through the redistributionlayer 170, and some of the conductive elements 180 are electricallyconnected to the TIVs 120 through the redistribution layer 170.

Referring to FIG. 1G, in some embodiments, the whole package 100,including the first dies 130, TIVs 120 and the molding compound 160, isturned upside down and disposed on a carrier film 300. Afterwards, thepackage 100 is detached from the carrier 102 and the debond layer 104.The first dies 130 are separated from the carrier 102.

In some embodiments, as shown in FIG. 1H, after debonding from thecarrier 102, the adhesive layer 106 is exposed. In some embodiments, theregions where the first dies 130 are disposed are first regions A1 ofthe package 100, while the regions where the TIVs 120 are located aresecond regions A2 of the package 100. In exemplary embodiments, thefirst regions A1 are central or device regions, while the second regionsA2 are connection or peripheral regions of the package structure.

Referring to FIG. 1I, in some embodiments, the adhesive layer 106 isremoved to expose the TIVs 120 (or the seed layer 108 a of the TIVs 120)by etching, peeling or performing a laser process and/or a cleaningprocess. In some embodiments, only the adhesive layer 106 on TIVs 120 isremoved to form open pads by a patterning process (such as, a laserdrilling process).

Referring to FIG. 1J, in some embodiments, connectors 200 arerespectively formed on the TIVs 120 in the second regions A2. In certainembodiments, the connectors 200 are solder bumps formed by performing asolder on pad (“SOP”) process. In some embodiments, prior to disposingthe connectors 200, flux may be applied so that the connectors 200 arebetter fixed to the seed layer 108 a or the TIVs 120. For illustrationpurposes, after the formation of the connectors, the thin seed layer isomitted in the following figures. In exemplary embodiments, theconnectors 200 are located right on the TIVs 120 respectively.

Referring to FIGS. 1K-1L, in some embodiments, polymeric cover films 210are formed on the first dies 130 and polymeric dam structures 220 areformed respectively between the connectors 200, and then the polymericcover films 210 and polymeric dam structures 220 are cured. In certainembodiments, the polymeric cover films 210 are formed by printing in thefirst regions A1 to cover the backsides of the first dies 130. Incertain embodiment, the printing process includes an inkjet printingprocess. In some embodiments, the polymeric cover films 210 are disposedmainly on the first dies 130, which provide protection and isolation forthe dies and further strengthen the thin package structure forpreventing warpage. That is, the polymeric cover films 210 are arrangedlocally in specific regions (i.e., the first regions A1) and are formedon and above the first dies 130, rather than being formed as a blanketlayer over the wafer. In some embodiments, the polymeric cover films 210are mainly formed within the first regions A1 but may be in contact withthe connectors 200 if overflown to the margins of the second regions A2.In certain embodiments, the polymeric dam structures 220 are formed inthe second regions A2 on the molding compound 160 between the connectors200 by printing. In some embodiments, the polymeric dam structures 220are arranged at outer sides of the connectors 200 (the outer sides arethe sides further away from the first die 130), since the TIVs 120 andthe connectors 200 are arranged to surround the first dies 130 locatedin the central region. In certain embodiment, the printing processincludes an inkjet printing process. In certain embodiments, thepolymeric cover films 210 and polymeric dam structures 220 may be formedin sequence or simultaneously by the same printing process usingdifferent materials.

As shown in FIGS. 3A & 1K-1L, in exemplary embodiments, the formation ofthe polymeric cover films 210 and polymeric dam structures 220 includesprinting a first material M1 using a first printing dispenser 32 in thefirst regions A1 to form the polymeric cover films 210 and printing asecond material M2 using a second printing dispenser 33 in the secondregions A2 to form the polymeric dam structures 220. In one embodiment,the printing of the first material M1 and the second material M2 areperformed at the same time and consecutively along a moving direction(such as direction D1 shown in FIG. 3A). In alternative embodiments, theprinting of the first material M1 and the second material M2 areperformed in turn, one after the other or one at a time.

In some embodiments, as shown in FIGS. 3A-3B, a printing module 3 movesalong a first direction D1 across the first and second regions A1, A2 ofthe whole package 100. In some embodiments, a first supply tank 30 forsupplying the first material M1 is connected to the first printingdispenser 32 and the first material M1 is dispensed from the firstprinting dispenser 32 in the first regions A1 to form the polymericcover films 210 (in FIG. 1K). In some embodiments, a second supply tank31 for supplying the second material M2 is connected to the secondprinting dispenser 33 and the second material M2 is dispensed from thesecond printing dispenser 33 in the second regions A2 to form thepolymeric dam structures 220 (in FIG. 1K). In exemplary embodiments,after the dispensers 32, 33 dispensing the first material M1 and thesecond material M2 respectively in the first region A1 and second regionA2 at the same time, the curing units 36, 35 by the sides of thedispensers 32, 33 irradiates a light capable of curing the first andsecond materials M1, M2, such as UV rays (illustrated as straight linesin the figures), to cure the dispensed materials M1, M2 as the printingmodule 3 moves along the first direction D1 to the next position. Insome embodiments, when moving in the first direction D1, the front mostcuring unit 34 may be turned off. Such printing and in-situ curing stepsmay be repeated a number of times to complete the printing of the firstmaterial M1 and the second material M2 to form the polymeric cover films210 and polymeric dam structures 220.

In alternative embodiments, the printing may be performed in one or moredirections or even in opposite directions in turn. As shown in FIGS.3C-3D, in some embodiments, the printing module 3 moves along a seconddirection D2, which is the opposite direction of D1. In exemplaryembodiments, after the dispensers 32, 33 dispensing the first materialM1 and the second material M2 respectively in the first region A1 andsecond region A2 at the same time, the curing units 35, 34 by the sidesof the dispensers 32, 33 irradiates UV rays (illustrated as straightlines in the figures) to cure the dispensed materials M1, M2 as theprinting module 3 moves along the second direction D2 to the nextposition. In some embodiments, when moving in the second direction D2,the front most curing unit 36 may be turned off. Such printing andin-situ curing steps may be repeated a number of times to complete theprinting of the first material M1 and the second material M2 to form thepolymeric cover films 210 and polymeric dam structures 220. By way ofthe arrangement of two dispensers sandwiched between three curing unitsin sequence (as seen in figures), the printing module can print morethan one materials at the same time and/or print in different movingdirections (i.e., moving back and forth, moving to the right or left)smoothly without standby for changing parts or printing heads.

FIG. 4A is a schematic layout diagram of a processing system 4 accordingto some exemplary embodiments of the present disclosure. FIGS. 4B and 4Care schematic cross sectional views illustrating processing chambers ofthe processing system 4 for the manufacturing of a semiconductor packageaccording to some exemplary embodiments of the present disclosure. Insome embodiments, within the processing system 4, after providing thewafer carrier, the carrier along with the above dies or packagestructures are pre-aligned in the pre-align module 40A and thentransferred to the printing and in-situ curing chamber 40P undergoingthe above mentioned printing and in-situ curing steps. In someembodiments, within the same printing and in-situ curing chamber 40P,the printing and curing of different polymeric materials to form thepolymeric cover film(s) and the polymeric dam structures are carriedout. In addition, further curing or post-curing of the polymeric coverfilm(s) and the polymeric dam structures are executed in the post-curingchamber 40U.

In FIG. 4B, the printing module 3 is disposed within the printing andin-situ curing chamber 40P so that the printing and curing of the wholepackage 100 are performed in the same chamber, thus preventing particlecontaminations during the transfer among chambers or within the system.In some embodiments, the printing module 3 includes a first supply tank30 for supplying the first material M1 and a second supply tank 31 forsupplying the second material M2. In some embodiments, the printingmodule 3 includes a first printing dispenser 32 and a second printingdispenser 33 sandwiched between three curing units 34, 35, 36 insequence. In some embodiments, since at least two tanks and/or at leasttwo printing dispensers are included for printing different polymericmaterials, relatively high flexibility in choosing the materials andrelatively high throughput for the printing may be achieved. Inexemplary embodiments, the first and second printing dispensers 32, 33and the curing units 34, 35, 36 may be arranged in a straight line alongthe moving direction. In some embodiments, the first printing dispenser32 is connected with the first supply tank 30 and the first material M1is dispensed from the first printing dispenser 32 in the first regionsA1 to form the polymeric cover films 210 (in FIG. 1K). In someembodiments, the second supply tank 31 is connected with the secondprinting dispenser 33 and the second material M2 is dispensed from thesecond printing dispenser 33 in the second regions A2 to form thepolymeric dam structures 220 (in FIG. 1K).

Referring to FIG. 4C, after being processed in the printing and in-situcuring chamber 40P, the package 100 is transferred to the post-curingchamber 40U undergoing the post-curing step. In some embodiments, a UVpost-curing unit 42 is arranged in the post-curing chamber 40U andlocated above the package 100. In some embodiments the UV post-curingunit 42 includes elements with thermal curing function (such as heatingelements or oven). It is understood that the processed package 100 maybe further transferred to other system or platform for further packagingprocessing steps and the carrier may be recycled and go back to framecassette or FOUP of the system.

Referring back to FIGS. 1K-1L, the connectors 200 are lower thanpolymeric dam structures 220 but higher than the polymeric cover films210. In certain embodiments, tops 200 a of the connectors 200 are lowerthan tops 220 a of the polymeric dam structures 220 but are higher thantop surfaces 210 a of the polymeric over films 210. In some embodiments,the polymeric dams 220 have the same height as the polymeric cover films210. In some embodiments, measuring from surface 160 b of the moldingcompound 160, the polymeric dam structures 220 have a height H1 higherthan the height of the connectors 200, and the height of the connectors200 is higher than a height (or thickness) H3 of the polymeric coverfilms 210. In some embodiments, the height H1 of the polymeric damstructure 220 is the same as the height H3 of the polymeric cover films210. In one embodiment, the polymeric dam structures 220 have a width W1(width on the surface 160 b of the molding compound 160) smaller orsubstantially equivalent to the pitch P1 of the connectors 200. Inexemplary embodiments, the height H1 of the polymeric dam structures 220ranges from about 10 microns to about 50 microns. In exemplaryembodiments, the thickness H3 of the polymeric cover film 210 rangesfrom about 2 microns to about 50 microns. In exemplary embodiments, theratio of the height H1 of the polymeric dam structures 220 to the heightof the connectors 200 (H1/the height of the connector) is about 1.0 toabout 2.0. In some embodiments, the ratio of the height H1 of thepolymeric dam structures 220 to the height of the connectors is greaterthan 1.0 and less than about 2.0.

In certain embodiment, the polymeric dam structures 220 are wall-likestructures or block structures arranged corresponding to the arrangementof the connectors 200. In exemplary embodiments, the connectors 200 arearranged in columns, rows or as rings and the polymeric dam structures220 are arranged beside. In exemplary embodiments, when the connectors200 are arranged in rows in the second region A2, the polymeric damstructures 220 are arranged as walls or block dams between the rows ofthe connectors 200 and beside the connectors 200, rather thanencapsulating the connectors (see the partial enlarged top view of FIG.1M). In FIG. 1M, it is unnecessary to have the polymeric dam structuresarranged at the border between the first and second regions A1, A2 (atthe inner sides of the connectors 200), as the package shall be diced atthe second region(s) A2 and will not be cut between the first and secondregions. In some embodiments, the polymeric cover film 210 arranged inthe first region A1 is a die backside film, and the materials of thepolymeric cover film 210 include polybenzooxazole (“PBO”), polyimide,epoxy resins and/or acrylic resins or the underfill, the mold compound.In some embodiments, the materials of polymeric dam structures 220include PBO, polyimide, epoxy resins and/or acrylic resins or theunderfill, the mold compound. In some embodiments, the material of thepolymeric cover film 210 has high glass transition temperature (Tg) andhigh modulus, beneficial for preventing warpage. In some embodiments,the material of the polymeric dam structure 220 has high Tg and highsurface tension, beneficial for forming the stable dam structures forblocking out the sawing debris. By choosing different materials forforming the polymeric cover films 210 and polymeric dam structures 220,higher flexibility in the choices of materials aiming at specificfunctions and/or compatible process steps or conditions is offered.

In exemplary embodiments, the manufacturing method described above ispart of a wafer level packaging process, and the whole package 100including plural package units 10 may be further mounted with additionalpackages, dies or other electronic devices.

FIG. 2A-2D are schematic cross sectional views illustrating asemiconductor package at various stages of the manufacturing methodaccording to some exemplary embodiments of the present disclosure. Thepackage 100 of FIG. 2A may be fabricated following the previouslydescribed manufacturing process as described in FIG. 1A-1L. The elementssimilar to or substantially the same as the elements described in FIG.1A-1L will use the same reference numbers, and certain details ordescriptions of the same elements will not be repeated herein. Referringto FIG. 2A, in some embodiments, after the formation of the polymericcover films 210 and polymeric dam structures 220, one or more secondsemiconductor packages 50 are provided and joined onto the whole package100 (including plural package units 10). In exemplary embodiments, thesecond semiconductor package 50 includes stacking dies 510, 520, atleast one redistribution layer 530 electrically connecting with the dies510, 520 and solder balls (not shown) located on the redistributionlayer 530. In some embodiments, a reflow process is performed and thepackages 50 are joined to the package 100 by forming connectionstructures 250 (i.e., joined solder balls). In one embodiment, duringthe reflow process, the connectors 200 are melted and joined with thesolder paste of the packages 50 to form the connection structures 250.In one embodiment, the connection structure 250 may be regarded as thereflowed connectors. Through the connection structures 250, the secondsemiconductor packages 50 are physically and electrically connected withthe package 100. In some embodiments, at least one of the dies 510, 520is electrically connected with the conductive elements 180 and/or thedie 130 through the redistribution layers 170, 530, the connectionstructures 250 and the TSVs 120. In some embodiments, an epoxy flux 252(FIG. 2D) may be present on the connection structures 250 as the flux isapplied to the solder paste of the packages 50 before the reflowprocess. In some embodiments, an underfill (not shown) may be applied tofill the gap between package 50 and package 100.

Referring to FIG. 2B, a dicing process is performed to cut the wholepackage 100 (at least cutting though the molding compound 160 and thepolymeric dam structures 220) and possibly the underfill along thecutting line (the dotted line) into individual and separatedsemiconductor packages 60 (in FIG. 2C). In one embodiment, the dicingprocess is a wafer dicing process including mechanical blade sawing orlaser cutting. In some embodiments, as the polymeric dam structures 220are arranged between the connectors 200 (between the connectionstructures 250 as well), cutting debris are kept away from theconnection structures 250 during the dicing process, thus avoidingelectrical failure of the package caused by saw debris and improving theproduct reliability and yield. In some embodiments, the semiconductorpackages 60 are obtained without using an underfill material filledbetween the second semiconductor packages 50 and the package 100. Insome embodiment, the semiconductor package 60 are obtained with theunderfill filled between the package 50 and the package 100. In FIG. 2C,in some embodiments, the diced packages 60 are package-on-packagestructures (POP).

FIG. 2D shows a schematic partially enlarged cross-sectional view of aportion of the diced package 60. In FIG. 2D, in certain embodiment,measuring from the surface 160 b of the molding compound 160, the heightH1 of the polymeric dam structures 220 is substantially equivalent to orslightly smaller than the standoff height H2 of the connectionstructures 250 and is larger than the height (thickness) H3 of thepolymeric cover films 210. In one embodiment, the width W1 of thepolymeric dam structures 220 is smaller than or substantially equivalentto the pitch P2 of the connection structures 250.

In some embodiments, omitting the lamination of blanket backside film,the package 60 locally formed with the polymeric cover film(s) 210 andpolymeric dam structures 220 has better product reliability and a robuststructure with less warpage. By applying the disclosed manufacturingmethods, the polymeric cover film 210 formed locally on the backside ofthe package unit 10 helps to prevent warpage and the polymeric damstructures 220 arranged beside the connection structures 250 kept debrisaway from the packages so that the electrical failure caused by thesawing debris is prevented and better product reliability can beachieved.

Referring to FIGS. 2C & 2D, the semiconductor package 60 includes atleast one package 50, the connection structures 250 and the package unit10, and the at least one package 50 is disposed on the package 10 withthe connection structures 250 located there-between.

FIG. 1L′ is a schematic cross sectional view of the diced packageaccording to some exemplary embodiments. In some embodiments, as shownin FIG. 1L′, the whole package 100 may be diced into plural packageunits 10. The package unit 10 itself is in fact a package structure butmay be joined with other elements, devices or packages to form apackage-on-package (POP) structure. In some embodiments, as shown inFIG. 1L′, before mounting with other devices or packages, the package 10includes the first die 130, the TIVs 120, the molding compound 160, theredistribution layer 170 and the conductive elements 180, the connectors200, the polymeric cover film 210 and the polymeric dam structures 220.In some embodiments, the first die 130 and the TIVs 120 are located onthe redistribution layer 170 and are electrically connected to theredistribution layer 170, while the molding compound 160 located on theredistribution layer 170 encapsulates the first die 130 and the TIVs120. In some embodiments, the connectors 200 are respectively located onthe TIVs 120 in the second regions A2. In some embodiments, thepolymeric cover film 210 is disposed on the molding compound 160 and onthe first die 130 in the first region A1. In some embodiments, thepolymeric dam structures 220 are disposed on the molding compound andarranged beside the connectors 200 and between the connectors in thesecond region A2. In some embodiments, the first die 130 and the moldingcompound 160 in the first region A1 are sandwiched between the polymericcover film 210 and the redistribution layer 170. In some embodiments,the TIVs 120 and the molding compound 160 in the second region A2 aresandwiched between the connectors 200, the polymeric dam structures 220and the redistribution layer 170. In certain embodiment, the TIVs 120penetrating through the molding compound 160 are arranged aside thefirst die 130. In certain embodiment, the connectors 200 are lower thanthe polymeric dam structures 220 as illustrated in FIG. 1L′.

In some embodiments, the package 10 may be an intermediate structure andmay be further packaged with another package(s) and/or additional diesover the first die 130, and one or more redistribution layer(s) may beadjusted to electrically connect another package(s) and/or theadditional dies. The structures and/or the process of the presentdisclosure shall not be limited by the exemplary embodiments.

According to some embodiments, a semiconductor package has at least onedie, a molding compound, through interlayer vias, a polymeric coverfilm, polymeric dam structures and connectors. The at least one die isencapsulated by the molding compound. The through interlayer vias arearranged beside the at least one die and penetrate the molding compound.At least one of the through interlayer vias is electrically connected tothe at least one die. The polymeric cover film is disposed on themolding compound and on the at least one die. The connectors aredisposed on the through interlayer vias. The polymeric dam structuresare disposed on the molding compound and located beside and between theconnectors. Tops of the polymeric dam structures are higher than tops ofthe connectors, and the polymeric cover film is made of a materialdifferent from that of the polymeric dam structures.

According to some embodiments, a manufacturing method for semiconductorpackages is provided. Through interlayer vias are formed on a carrier. Aplurality of dies is disposed on the carrier and aside the throughinterlayer vias. A molding compound is formed over the carrier toencapsulate the plurality of dies and the through interlayer vias. Thecarrier is detached from the molding compound so as to expose thethrough interlayer vias. Connectors are formed on the through interlayervias. Polymeric cover films are formed over the molding compound and onthe plurality of dies. Polymeric dam structures are formed on themolding compound, around and between the connectors. A dicing process isperformed cutting through the molding compound to separate thesemiconductor packages.

According to some embodiments, a printing module is provided. Theprinting module comprises a first printing dispenser and a secondprinting dispenser and a first curing unit, a second curing unit and athird curing unit. The first and second printing dispensers are operableto dispense a first material and a second material respectively. Each ofthe first, second and third curing units is operable to irradiate alight capable of curing the first and second materials. The first,second and third curing units are alternately arranged with the firstand second printing dispensers along a line. The first printingdispenser is sandwiched between the first and second curing units, andthe second printing dispenser is sandwiched between the second and thirdcuring units. The first and second dispensers and the first, second andthird curing units are simultaneously movable along the line. When theprinting module moves in a first direction along the line, the firstcuring unit is off, the first and second dispensers are operable todispense the first and second materials at corresponding positions of aworkpiece, and the second and third curing units are operable toirradiate the light at the corresponding positions of the workpiece tocure the dispensed first and second materials. When the printing moduleis moving in a second direction opposite to the first direction, thethird curing unit is off, the first and second printing dispensers areoperable to dispense the first and second materials at correspondingpositions of the workpiece and the first and second curing units areoperable to irradiate the light at the corresponding positions of theworkpiece to cure the first and second materials. The printing modulemay further includes a first supply tank and a second supply tank.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor package comprising: at least one die; a moldingcompound encapsulating the at least one die; through interlayer vias(TIVs), penetrating the molding compound and arranged beside the atleast one die, wherein at least one of the through interlayer vias iselectrically connected with the at least one die; a polymeric coverfilm, disposed on the molding compound and on the at least one die;connectors, disposed on the through interlayer vias; and polymeric damstructures, disposed on the molding compound and located beside andbetween the connectors, wherein the polymeric dam structures are blockstructures arranged around the connectors and between the connectors ina region where the TIVs are located, tops of the polymeric damstructures are higher than tops of the connectors, and the polymericcover film is made of a material different from that of the polymericdam structures.
 2. The semiconductor package as claimed in claim 1,wherein a height of the connectors is larger than a thickness of thepolymeric cover film and is smaller than a height of the polymeric damstructures.
 3. The semiconductor package as claimed in claim 2, whereina ratio of the height of the polymeric dam structures to the height ofthe connectors is greater than 1.0 and less than about 2.0.
 4. Thesemiconductor package as claimed in claim 1, wherein the polymeric coverfilm is disposed on the molding compound covering a backside of the atleast one die over a region where the at least one die is disposed. 5.(canceled)
 6. The semiconductor package as claimed in claim 1, whereinthe polymeric dam structure has a width smaller than a distance betweentwo most adjacent connectors.
 7. The semiconductor package as claimed inclaim 1, wherein the TIVs are arranged surrounding the at least one die,and the polymeric dam structures are arranged at outer sides of theconnectors that are further away from the at least one die.
 8. Thesemiconductor package as claimed in claim 1, further comprising aredistribution layer disposed on the molding compound and conductiveelements located on the redistribution layer, wherein the conductiveelements are electrically connected to the TIVs and the at least one diethrough the redistribution layer.
 9. The semiconductor package asclaimed in claim 8, further comprising: a first package unit comprisingthe at least one die, the molding compound and the TIVs; a secondpackage unit disposed on the first package unit; and connectionstructures sandwiched between and interconnecting the first and secondpackage units, wherein the at least one die is electrically connectedwith the second package unit through the connection structures, the TIVsand the redistribution layer. 10-20. (canceled)
 21. A semiconductorpackage comprising: at least one die; a molding compound encapsulatingthe at least one die; through interlayer vias (TIVs), penetrating themolding compound and arranged surrounding the at least one die, whereinat least one of the through interlayer vias is electrically connectedwith the at least one die; a polymeric cover film, disposed on themolding compound and on the at least one die; connectors, disposed onthe through interlayer vias; and polymeric dam structures, disposed onthe molding compound and located beside the connectors, wherein thepolymeric dam structures are arranged at outer sides of the connectorsthat are further away from the at least one die, and the polymeric coverfilm is made of a material different from that of the polymeric damstructures.
 22. The semiconductor package as claimed in claim 21,wherein a height of the connectors is larger than a thickness of thepolymeric cover film and is smaller than a height of the polymeric damstructures.
 23. The semiconductor package as claimed in claim 21,wherein the polymeric dam structure has a width smaller than a distancebetween two most adjacent connectors.
 24. The semiconductor package asclaimed in claim 21, further comprising a redistribution layer disposedon the molding compound and conductive elements located on theredistribution layer, wherein the conductive elements are electricallyconnected to the TIVs and the at least one die through theredistribution layer.
 25. The semiconductor package as claimed in claim24, further comprising: a first package unit comprising the at least onedie, the molding compound and the TIVs; a second package unit disposedon the first package unit; and connection structures sandwiched betweenand interconnecting the first and second package units, wherein the atleast one die is electrically connected with the second package unitthrough the connection structures, the TIVs and the redistributionlayer.
 26. A semiconductor package comprising: at least one die; amolding compound encapsulating the at least one die; through interlayervias (TIVs), penetrating the molding compound and arranged beside the atleast one die, wherein at least one of the through interlayer vias iselectrically connected with the at least one die; a polymeric coverfilm, disposed on the molding compound and on the at least one die;connectors, disposed on the through interlayer vias; and polymeric damstructures, disposed on top of the molding compound and located besidethe connectors, wherein an outer edge of one of the polymeric damstructures aligns with an outer edge of the molding compound, and thepolymeric cover film is made of a material different from that of thepolymeric dam structures.
 27. The semiconductor package as claimed inclaim 26, wherein a height of the connectors is larger than a thicknessof the polymeric cover film and is smaller than a height of thepolymeric dam structures.
 28. The semiconductor package as claimed inclaim 26, wherein the polymeric dam structures are block structuresarranged around the connectors and between the connectors in a regionwhere the TIVs are located.
 29. The semiconductor package as claimed inclaim 26, wherein one of the polymeric dam structures has a widthsmaller than a distance between two most adjacent connectors.
 30. Thesemiconductor package as claimed in claim 26, wherein the TIVs arearranged surrounding the at least one die, and the polymeric damstructures are arranged at outer sides of the connectors that arefurther away from the at least one die.
 31. The semiconductor package asclaimed in claim 26, further comprising a redistribution layer disposedon the molding compound and conductive elements located on theredistribution layer, wherein the conductive elements are electricallyconnected to the TIVs and the at least one die through theredistribution layer.
 32. The semiconductor package as claimed in claim31, further comprising: a first package unit comprising the at least onedie, the molding compound and the TIVs; a second package unit disposedon the first package unit; and connection structures sandwiched betweenand interconnecting the first and second package units, wherein the atleast one die is electrically connected with the second package unitthrough the connection structures, the TIVs and the redistributionlayer.